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insulated gate bipolar transistor with ultrafast soft recovery diode e g n-channel c v ces = 600v i c = 60a, t c = 100c t sc ?? 5 s, t j(max) = 175c v ce(on) typ. = 1.6v features low v ce (on) trench igbt technology low switching losses maximum junction temperature 175 c 5 s short circuit soa square rbsoa 100% of the parts tested for 4x rated current (i lm ) positive v ce (on) temperature co-efficient ultra fast soft recovery co-pak diode tight parameter distribution lead free package benefits high efficiency in a wide range of applications suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses rugged transient performance for increased reliability excellent current sharing in parallel operation low emi absolute maximum ratings stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. g c e gate collector emitter to-247ac auirgp4063d to-247ad AUIRGP4063D-E g c e c g c e c automotive grade

base part number package type orderable part number form quantity auirgp4063d to-247 tube 25 auirgp4063d AUIRGP4063D-E to-247 tube 25 AUIRGP4063D-E standard pack parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 100 i c @ t c = 100c continuous collector current 60 i cm pulse collector current, v ge = 15v 144 i lm clamped inductive load current, v ge = 20v 192 a i f @ t c = 25c diode continous forward current 82 i f @ t c = 100c diode continous forward current 50 i fm diode maximum forward current 192 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 330 w p d @ t c = 100c maximum power dissipation 170 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) downloaded from: http:///

thermal resistance parameter min. typ. max. units r ? jc (igbt) thermal resistance junction-to-case-(each igbt) CCC CCC 0.45 c/w r ? jc (diode) thermal resistance junction-to-case-(each diode) CCC CCC 0.92 r ? cs thermal resistance, case-to-sink (flat, greased surface) CCC 0.24 CCC r ? ja thermal resistance, junction-to-ambient (typical socket mount) CCC 80 CCC notes: v cc = 80% (v ces ), v ge = 20v, l = 200 h, r g = 10 ? . this is only applied to to-247ac package. pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces col l ector - to- e mi tter b r eak down v ol tage 6 0 0vv ge = 0v, i c = 150 a ct 6 ? v (br)ces / ? t j t emperature coeff. of b reakdown voltage 0 . 3 0v / cv ge = 0v, i c = 1ma (25c-175c) ct 6 1 . 61 . 9 i c = 48a, v ge = 15v, t j = 25c 5,6 ,7 v ce (on) collector-to-emitter saturation voltage 1.9 v i c = 48a, v ge = 15v, t j = 150c 9,10,11 2 . 0 i c = 48a, v ge = 15v, t j = 175c v ge (th) gate threshold voltage 4.0 6.5 v v ce = v ge , i c = 1.4ma 9, 10, ? v ge ( t h ) / ? tj threshold voltage temp. coefficient -21 mv/c v ce = v ge , i c = 1.0ma (25c - 175c) 11, 12 gfe forward transconductance 32 s v ce = 50v, i c = 48a, pw = 80 s i ce s collector-to-emitter leakage current 1.0 150 av ge = 0v, v ce = 600v 450 1000 v ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop 1.95 2.91 v i f = 48a 8 1 . 4 5 i f = 48a, t j = 175c i ge s gate-to-emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) 95 140 i c = 48a 24 q ge gate-to-emitter charge (turn-on) 28 42 nc v ge = 15v ct 1 q gc gate-to-collector charge (turn-on) 35 53 v cc = 400v e on turn-on switching loss 625 1141 i c = 48a, v cc = 400v, v ge = 15v ct 4 e off turn-off switching loss 1275 1481 jr g = 10 ? , l = 200 h, l s = 150nh, t j = 25c e total total switching loss 1900 2622 e ner gy los s es include tail & diode r ever s e r ecovery t d(on) turn-on delay time 60 78 i c = 48a, v cc = 400v, v ge = 15v ct 4 t r rise time 40 56 ns r g = 10 ? , l = 200 h, l s = 150nh, t j = 25c t d(off) turn-off delay time 145 176 t f fall time 35 46 e on turn-on switching loss 1625 i c = 48a, v cc = 400v, v ge =15v 13 , 15 e off turn-off switching loss 1585 jr g =10 ? , l=200 h, l s =150nh, t j = 175c ct 4 e total total switching loss 3210 e ner gy los s es include tail & diode r ever s e r ecovery wf1, wf2 t d(on) turn-on delay time 55 i c = 48a, v cc = 400v, v ge = 15v 14 , 16 t r rise time 45 ns r g = 10 ? , l = 200 h, l s = 150nh ct 4 t d(off) turn-off delay time 165 t j = 175c wf 1 t f fall time 45 wf2 c ies input capacitance 3025 pf v ge = 0v 23 c oes output capacitance 245 v cc = 30v c res reverse transfer capacitance 90 f = 1.0mhz t j = 175c, i c = 192a 4 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct 2 rg = 10 ? , v ge = +15v to 0v scsoa short circuit safe operating area 5 sv cc = 400v, vp =600v 22, ct 3 rg = 10 ? , v ge = +15v to 0v wf4 erec reverse recovery energy of the diode 845 jt j = 175c 17 , 18 , 19 t rr diode reverse recovery time 115 ns v cc = 400v, i f = 48a 20, 21 i rr peak reverse recovery current 40 a v ge = 15v, rg = 10 ? , l =200 h, l s = 150nh wf 3 conditions downloaded from: http:///

fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j ?? 175c; v ge =15v fig. 4 - reverse bias soa t j = 175c; v ge =15v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80 s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 175c single pulse dc 25 50 75 100 125 150 175 t c (c) 0 100 200 300 400 p t o t ( w ) 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 i c , c o l l e c t o r c u r r e n t ( a ) downloaded from: http:///

fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80 s fig. 8 - typ. diode forward characteristics tp = 80 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 175c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10 s fig. 9 - typical v ce vs. v ge t j = -40c 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 1.0 2.0 3.0 4.0 v f (v) 0 20 40 60 80 100 120 140 160 180 200 i f ( a ) -40c 25c 175c 5 1 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a 5 1 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a 5 1 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a 0 5 10 15 v ge (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) t j = 25c t j = 175c downloaded from: http:///

fig. 13 - typ. energy loss vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ? ; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ? ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 200 h; v ce = 400v, i ce = 48a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l = 200 h; v ce = 400v, i ce = 48a; v ge = 15v fig. 17 - typ. diode i rr vs. i f t j = 175c fig. 18 - typ. diode i rr vs. r g t j = 175c 0 20 40 60 80 100 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 rg ( ? ) 1000 1500 2000 2500 3000 3500 4000 4500 5000 e n e r g y ( j ) e off e on 0 25 50 75 100 125 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 i f (a) 0 5 10 15 20 25 30 35 40 45 i r r ( a ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 0 25 50 75 100 125 r g ( ?? 10 15 20 25 30 35 40 45 i r r ( a ) 0 50 100 150 i c (a) 0 1000 2000 3000 4000 5000 6000 e n e r g y ( j ) e off e on downloaded from: http:///

fig. 19 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 48a; t j = 175c fig. 20 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 24 - typical gate charge vs. v ge i ce = 48a; l = 600 h fig. 21 - typ. diode e rr vs. i f t j = 175c fig. 22 - v ge vs. short circuit time v cc = 400v; t c = 25c 0 200 400 600 800 1000 di f /dt (a/ s) 10 15 20 25 30 35 40 45 i r r ( a ) 0 20 40 60 80 100 i f (a) 0 100 200 300 400 500 600 700 800 900 e n e r g y ( j ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 8 1 01 21 41 61 8 v ge (v) 4 6 8 10 12 14 16 18 t i m e ( s ) 50 100 150 200 250 300 350 400 c u r r e n t ( a ) 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 2 55 07 51 0 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 300v v ces = 400v 0 500 1000 1500 di f /dt (a/ s) 1000 1500 2000 2500 3000 3500 4000 q r r ( c ) 10 ? 22 ? 100 ? 47 ? 48a 24a 96a downloaded from: http:///

fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ?? i (sec) 0.0872 0.0001140.1599 0.001520 0.2020 0.020330 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ? ? c ci i ? ri ci= ? i ? ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ?? i (sec) 0.2774 0.000908 0.3896 0.003869 0.2540 0.030195 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ? ? c ci i ? ri ci= ? i ? ri downloaded from: http:///

1k vc c dut 0 l l rg 80 v dut 480v dc 4x dut 360v l rg vcc diode clamp / du t du t / driver - 5v rg vcc dut r = v cc i cm fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit c f orce 400 h g f orce dut d1 10k c sen se 0.0075 e sense e force fig.c.t.6 - bvces filter circuit downloaded from: http:///

fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -100 0 100 200 300 400 500 600 700 -0.40 0.10 0.60 1.10 time( s) v ce (v) -20 0 20 40 60 80 100 120 140 e off loss 5% v ce 5% i ce 90% i ce tf -100 0 100 200 300 400 500 600 6.20 6.40 6.60 6.80 7.00 time ( s) v ce (v) -20 0 20 40 60 80 100 120 e on test curre 90% test 10% test 5% v ce tr -40 -30 -20 -10 0 10 20 30 40 50 60 -0.15 -0.05 0.05 0.15 0.25 time ( s) i rr (a) peak i rr q rr t rr 10% peak i rr -100 0 100 200 300 400 500 600 -5.00 0.00 5.00 10.00 time ( s) v ce (v) -100 0 100 200 300 400 500 600 i ce (a) v ce i ce downloaded from: http:///

to-247ac package is not recommended for surface mount application.

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558 %12322%. % qualification information ? moisture sensitivity level to-247ac n/a to-247ad n/a rohs compliant yes esd machine model class m4 (425v) ?? (per aec-q101-002) human body model class h2 (4000v) ?? (per aec-q101-001) charged device model class c5 (1125v) ?? (per aec-q101-005) qualification level automotive (per aec-q101) ? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. downloaded from: http:///

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